high voltage fast switching npn power transistor APT13005 data sheet 1 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited general description the APT13005 series are high voltage, high speed, high efficiency switching tr ansistor, and it is specially designed for off-line switch mode power supplies with low output power. the APT13005 series is available in to-220-3, to- 220-3(2), and to-220f-3 packages. features high switching speed high collector-emitt er voltage: 700v low cost high efficency applications battery chargers for mobile phone power supply for dvd/stb figure 1. package types of APT13005 to-220-3 to-220f-3 to-220-3(2)
high voltage fast switching npn power transistor APT13005 data sheet 2 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited pin configuration figure 2. pin configuration of APT13005(front view) t package (to-220-3) figure 3. internal structure of APT13005 1 2 3 1 2 3 1 2 3 tf package (to - 220f-3) (to-220-3(2)) base emitter collector base emitter collector base emitter collector collector emitter base
high voltage fast switching npn power transistor APT13005 3 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited data sheet dd d d d parameter symbol value unit collector-emitter voltage (v be =0) v ces 700 v collector-emitter voltage (i b =0) v ceo 450 v emitter-base breakdown voltage (i c =0) v ebo 9v collector current i c 4a collector peak current i cm 8a base current i b 2a base peak current i bm 4a power dissipation, t c =25 o c to-220-3/ to-220-3 (2) p tot 75 w to-220f-3 28 operating junction temperature 150 o c storage temperature range -65 to 150 o c ordering information note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) circuit type package APT13005 - bcd semiconductor's pb-free products , as designated with "e1" suffix in the pa rt number, are rohs compliant. products with "g1" suffix are available in green packages. t: to-220-3/to-220-3(2) tf: to-220f-3 blank: tube e1: lead free g1: green package part number marking id packing type lead free green lead free green to-220-3/ to-220-3(2) APT13005t-e1 APT13005t-g1 APT13005t-e1 APT13005t-g1 tube to-220f-3 APT13005tf-e1 APT13005tf-g1 APT13005tf -e1 APT13005tf-g1 tube
high voltage fast switching npn power transistor APT13005 data sheet 4 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit collector cut-off current (v be =-1.5v) i cev v ce =700v 10 a collector-emitter sustaining vo l t a g e ( i b =0) (note 2) v ceo (sus) i c =100 a 450 v collector-emitter saturation vo l t a g e v ce (sat) i c =1.0a, i b =0.2a 0.3 v i c =2.0a, i b =0.5a 0.6 i c =4.0a, i b =1.0a 0.9 base-emitter saturation vo l t a g e v be (sat) i c =1.0a, i b =0.2a 1.1 v i c =2.0a, i b =0.5a 1.3 dc current gain (note 2) h fe i c =1.0a, v ce =5.0v 15 35 i c =2.0a, v ce =5.0v 8 35 turn -on time with resistive load ton i c =2a, v cc =125v i bi =0.4a, i b2 =-0.4v 0.8 s storage time with resistive load ts 4.5 s fall time with resistive load tf 0.9 s output capacitance c ob v cb =10v, f=0.1mhz 45 pf current gain bandwidth product f t v ce =10v, i c =0.5a 4 mhz ( t c =25 o c, unless otherwise specified.) electrical characteristics note 2: pulse test for pulse width 300 s, duty cycle 2%. parameter symbol condition value unit maximum thermal resistance jc junction to case to-220-3/ to-220-3(2) 1.67 o c/w to-220f-3 4.5 thermal characteristics
high voltage fast switching npn power transistor APT13005 5 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited data sheet dd d d d typical performance characteristics figure 4. safe operating areas figure 7. static characterstics figure 6. power derating curve 1 10 100 1000 0.01 0.1 1 10 t c =25 o c collector current i c (a) collector-emitter clamp voltage v ce (v) dc 1 10 100 1000 0.01 0.1 1 10 t c =25 o c collector current i c (a) collector-emitter clamp voltage v ce (v) dc 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 power derating factor(%) case temperature( o c) 012345678 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i b =400ma i b =500ma i b =50ma i b =100ma i b =150ma i b =200ma i b =250ma i b =300ma i b =350ma collector current i c (a) collector-emitter voltage v ce (v) i b =450ma (to-220-3/to-220-3(2) package) figure 5. safe operating areas (to-220f-3 package)
high voltage fast switching npn power transistor APT13005 data sheet 6 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 9. collector-emitter saturation region 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 t j =25 o c dc current gain collector current i c (a) t j =125 o c v ce =5v 0.1 1 10 0.01 0.1 1 t j =25 o c collector-emitter voltage v ce (v) collector current i c (a) t j =125 o c h fe =4 0.1 1 10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t j =25 o c t j =125 o c base-emitter voltage v be (v) collector current i c (a) h fe =4 figure 10. base-emitter saturation voltage figure 8. dc current gain
high voltage fast switching npn power transistor APT13005 7 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited data sheet dd d d d mechanical dimensions to-220-3 unit: mm(inch) 3.560(0.140) 1 4 . 2 3 0 ( 0 . 5 6 0 ) 1.160(0.046) 0.813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2.540(0.100) 0.356(0.014) 2.080(0.082) 3 7 3.560(0.140) 7 9.660(0.380) 0.550(0.022) 60 0.381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 8 . 5 2 0 ( 0 . 3 3 5 ) 1.500(0.059) 0.200(0.008) 1 . 8 5 0 ( 0 . 0 7 3 ) 2.540(0.100) 0.381(0.015) 0.406(0.016) 3 . 3 8 0 ( 0 . 1 3 3 ) 10.660(0.420) 4.060(0.160) 1.350(0.053) 2 7 . 8 8 0 ( 1 . 0 9 8 ) 3 0 . 2 8 0 ( 1 . 1 9 2 ) 9 . 5 2 0 ( 0 . 3 7 5 ) 1 6 . 5 1 0 ( 0 . 6 5 0 ) 4.820(0.190) 2.880(0.113) 1.760(0.069)
high voltage fast switching npn power transistor APT13005 data sheet 8 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited mechanical dimensions (continued) to-220-3 (2) unit: mm(inch) 3 3 1.300(0.051) 3 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 11.100(0.437) 0.700(0.028) 0.900(0.035) 1.270(0.050) 2.540(0.100) 2.540(0.100) 9.600(0.378) 10.600(0.417) 12.600(0.496) 13.600(0.535) 9.000(0.354) 9.400(0.370) 1.300(0.051) 0.600(0.024) 1.700(0.067) 6.300(0.248) 6.700(0.264) 4.500(0.177) 2.400(0.094) 0.400(0.016) 0.600(0.024) ?
high voltage fast switching npn power transistor APT13005 9 aug. 2010 rev 1. 1 bcd semiconductor manufacturing limited data sheet dd d d d 4.300(0.169) 0.450(0.018) 0.600(0.024) 2.540(0.100) 9.700(0.382) 10.300(0.406) 6.900(0.272) 7.100(0.280) 3.000(0.119) 3.400(0.134) 14.700(0.579) 16.000(0.630) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 3.000(0.119) 3.550(0.140) 3.370(0.133) 3.900(0.154) 2.350(0.093) 2.900(0.114) 4.900(0.075) [ mechanical dimens ions (continued) to-220f-3 unit: mm(inch) ?
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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